PART |
Description |
Maker |
IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
BAS125-06W BAS125-05W BAS125-04W BAS125W |
Schottky Diodes - RF Schottky diode for low-loss, fast-recovery, meter protection, ... Silicon Schottky Diodes
|
INFINEON[Infineon Technologies AG]
|
BZX85C47GP BZX85C15GP BZX85C75GP BZX85C7V5GP BZX85 |
150 V, 2 mA, 1.3 W glass passivated zener diode SMALL SIGNAL SCHOTTKY DIODES 齐纳二极 5.0V PC real-time clock 齐纳二极 Low capacitance, low series inductance and resistance Schottky diodes Low capacitance small signal Schottky diodes Small signal Schotky diodes
|
Fagor Electronics Industry Public Company Limited Fairchild Semiconductor, Corp.
|
SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
SML05SC06D3B SML05SC06D3A |
SiC SCHOTTKY DIODE
|
Seme LAB
|
SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|